Thermally activated processes and bias field effects on the electrical properties of BiFeO3 thin films

  • Saulo Portes dos Reis Federal Institute of Education, Science and Technology of São Paulo, 15503-110 Votuporanga, Brazil
  • Fernando Brondani Minussi Department of Physics and Chemistry, São Paulo State University, 15385-000 Ilha Solteira, Brazil
  • Eudes B. Araujo Department of Physics and Chemistry, São Paulo State University, 15385-000 Ilha Solteira, Brazil
DOI: https://doi.org/10.34624/nmse.v2i1.8485

Abstract

This work reports the temperature and electric field effects on the electrical properties of BiFeO3 thin films. The increase in temperature promotes an increase in the dielectric permittivity of the studied film in the range of 100 Hz to 1 MHz, with a dielectric dispersion at the lower frequencies (∼ 100 Hz), but no pronounced effects of the electric field on dielectric permittivity in the same frequency range were observed. The effects of temperature and electric on the electrical conductivity were also studied. Based on the obtained activation energy E = 0.40 eV, the conduction mechanism in the studied BiFeO3 film was associated to the first ionization of oxygen vacancies.

Published
2020-03-09
Issue
Vol 2 No 1 (2020): Nanomaterials Science & Engineering
Section
Articles

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