Thermally activated processes and bias field effects on the electrical properties of BiFeO3 thin films
This work reports the temperature and electric field effects on the electrical properties of BiFeO3 thin films. The increase in temperature promotes an increase in the dielectric permittivity of the studied film in the range of 100 Hz to 1 MHz, with a dielectric dispersion at the lower frequencies (∼ 100 Hz), but no pronounced effects of the electric field on dielectric permittivity in the same frequency range were observed. The effects of temperature and electric on the electrical conductivity were also studied. Based on the obtained activation energy E = 0.40 eV, the conduction mechanism in the studied BiFeO3 film was associated to the first ionization of oxygen vacancies.
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