XPS study of the thermal vapour sulfurization of tungsten thin films
Abstract
Here we report the XPS spectra of thermally sulfurized tungsten thin films on SiO2 at different temperatures. The sulfurization was performed in a chemical vapour deposition system at 400 ºC, 500 ºC, 550 ºC, 600 ºC and 750 ºC. Below 500 ºC XPS showed that the tungsten layer was oxidized (W6+) and only carbon-sulfur compounds were detected. On the other hand, from 600 ºC the sulfurization process was complete by forming WS2, while at the intermediate temperature of 550 ºC the films were partially oxidized and partially sulfurized.
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