Improved performance of Silicon solar cells by ZnMgO front laye

  • Amel Bahfir DDCS / Research Centre in Semiconductor Technology for Energetics (CRTSE). 2, Bd. Frantz Fanon, B.P. 140 -7 Merveilles, Algiers, Algeria
  • Messaoud Boumaour DDCS / Research Centre in Semiconductor Technology for Energetics (CRTSE). 2, Bd. Frantz Fanon, B.P. 140 -7 Merveilles, Algiers, Algeria
  • Zoubir Chaieb DDCS / Research Centre in Semiconductor Technology for Energetics (CRTSE). 2, Bd. Frantz Fanon, B.P. 140 -7 Merveilles, Algiers, Algeria
  • Hadjira Labeche DDCS / Research Centre in Semiconductor Technology for Energetics (CRTSE). 2, Bd. Frantz Fanon, B.P. 140 -7 Merveilles, Algiers, Algeria
Keywords: 1D-SCAPS software, passivation layer, Silicon solar cells, ZnMgO alloy

Abstract

Silicon solar cells play a dominant role in the photovoltaic market. However, their manufacturing process is quite expensive and involves complex processes. Therefore, new materials are intensively explored for the aim of potentially higher efficiency and lower cost solar cells.

ZnMgO alloy is a very promising transparent conductive oxide layer and which acts as front layer as well as an anti-reflective coating in silicon solar cells reducing costs and complexity of process.

Numerical simulation using the SCAPS-1D software enables to find the optimized parameters of p-Si/ZnMgO hetero-junction in comparison with the structure comprising ZnO front layer. Even with the effect of stress caused by the high lattice mismatch at the ZnMgO/Si interface, our calculations show a conversion efficiency of 16.57%.The introduction of a thin layer of hydrogenated amorphous silicon improves the cell output performance to 17.14%.

Published
2020-12-10