Growth and spectral characteristics of single crystal layer of KY(WO4)2 doped with Ho3+ions
Abstract
We report on growth and characterization of Ho3+ doped KY(WO4)2 layers having high structural homogeneity and optical quality. The obtained samples of KGd0.028Yb0.047Y0.875 (WO4)2 layer doped with 5.0 at.% of Ho3+ content with a thickness of 140 μm have been prepared using liquid phase epitaxy method, the samples can be used as gain medium of planar waveguide lasers, emitting in the spectral range of about 2 mm.
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