GaAs: Si nanowires: critical reduction of the effect of ZB/WZ polytypism on the electronic structure N. Ben Sedrine Department of Physics & I3N, University of Aveiro J. Bourgard Department of Physics & I3N, University of Aveiro J. P. Teixeira Department of Physics & I3N, University of Aveiro M. R. Correia Department of Physics & I3N, University of Aveiro J. P. Leitão Department of Physics & I3N, University of Aveiro R. Ribeiro-Andrade INL – International Iberian Nanotechnology Laboratory P. M. P. Salomé INL – International Iberian Nanotechnology Laboratory A. Gustafsson Solid State Physics and NanoLund, Lund University M. R. Soares Laboratório Central de Análises, University of Aveiro R. Ribeiro-Andrade M. V. B. Moreira Departamento de Física, Universidade Federal de Minas Gerais A. G. De Oliveira Departamento de Física, Universidade Federal de Minas Gerais J. C. González Departamento de Física, Universidade Federal de Minas Gerais Abstract No abstract available. PDF Published 2018-01-01 Issue Vol 9 (2018) Section Research highlights License